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Tantalum (Ta) Sputtering Targets

Tantalum (Ta) Sputtering Targets Overview

Our comprehensive offering of sputtering targets, evaporation sources and other deposition materials is listed by material throughout the website. Below you will find budgetary pricing for sputtering targets and deposition materials per your requirements. Actual prices may vary due to market fluctuations. To speak to someone directly about current pricing or for a quote on sputtering targets and other deposition products not listed, please click here.

Tantalum (Ta) General Information

Tantalum is classified as a transition metal on the Periodic Table and is considered to be one of the refractory metals which are highly resistant to corrosion. Tantalum has a melting point of 3,017°C, a density of 16.6 g/cc, and a vapor pressure of 10-4 Torr at 2,590°C. It is metallic grey-blue in color with strikingly similar chemical properties to niobium. It is mainly used to make surgical implants due to its non-toxic nature. It is also used as a capacitor for electronics and may be alloyed with other metals to add strength and durability. Tantalum, along with its alloys and compounds, is evaporated under vacuum to make semiconductors, optical coatings, magnetic storage media, and wear and corrosion resistant coatings.

Tantalum (Ta) Specifications

Material TypeTantalum SymbolTa Atomic Weight180. Atomic Number73 Color/AppearanceGray Blue, Metallic Thermal Conductivity57 W/m.K Melting Point (°C)3,017 Coefficient of Thermal Expansion6.3 x 10-6/K Theoretical Density (g/cc)16.6 Z Ratio0.262 SputterDC Max Power Density
(Watts/Square Inch)50* Type of BondIndium, Elastomer CommentsForms good films.

* This is a recommendation based on our experience running these materials in KJLC guns. The ratings are based on unbonded targets and are material specific. Bonded targets should be run at lower powers to prevent bonding failures. Bonded targets should be run at 20 Watts/Square Inch or lower, depending on the material.

* Suggested maximum power densities are based on using a sputter up orientation with optimal thermal transfer from target to the sputter cathode cooling well. Using other sputtering orientations or if there is a poor thermal interface between target to sputter cathode cooling well may require a reduction in suggested maximum power density and/or application of a thermal transfer paste. Please contact for specific power recommendations.

Z-Factors

Empirical Determination of Z-Factor

Unfortunately, Z Factor and Shear Modulus are not readily available for many materials. In this case, the Z-Factor can also be determined empirically using the following method:

• Deposit material until Crystal Life is near 50%, or near the end of life, whichever is sooner.
• Place a new substrate adjacent to the used quartz sensor.
• Set QCM Density to the calibrated value; Tooling to 100%
• Zero thickness
• Deposit approximately to A of material on the substrate.
• Use a profilometer or interferometer to measure the actual substrate film thickness.
• Adjust the Z Factor of the instrument until the correct thickness reading is shown.

Another alternative is to change crystals frequently and ignore the error. The graph below shows the % Error in Rate/Thickness from using the wrong Z Factor. For a crystal with 90% life, the error is negligible for even large errors in the programmed versus actual Z Factor.

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With competitive price and timely delivery, Advanced Targets sincerely hope to be your supplier and partner.

Target Materials

Quantity

Material Tantalum
Formula Ta
Purity 99.995% Typical Substrates Silicon
Related Materials

Pt, Cu, Al

 

Tantalum (Ta) is a blue-grey refractory metal and is an excellent choice for sputtering target material because it has a strong resistance to corrosion, excellent electrical conductivity, and a high melting point. Tantalum, can be deposited by both sputtering and evaporation.

The Common Uses of Tantalum in Thin Film Form

Tantalum (Ta) is a refractory metal critical to the architecture of microchips. High purity Ta targets are used to sputter microscopic thin layers of tantalum on silicon wafers, enabling the manufacturing semiconductor logic chips with high performance. In addition, it is used as a diffusion barrier in semiconductor processing, and as a protective coating in the medical industry.

What are the Typical Properties of Ta in Thin Film Form?

Tantalum thin films offer excellent electrical and thermal conductivity, and a high melting point. The electrical conductivity of Ta is relatively low, but it is still much higher than other materials such as aluminum and copper. In addition, Tantalum is especially resistant to chemicals at temperatures below 150 °C and can only be dissolved with hydrofluoric acid. It has the fourth-highest melting point of all metals and is able to form extremely thin and protective oxide layers for high-quality capacitors,

What are the Typical Deposition Conditions for Tantalum Thin Films by Sputtering?

When depositing Tantalum thin films by sputtering, a substrate temperature of approximately 50-200C is typically used. The base pressure should be10-8 Torr and the Ar background gas should bein the range of 0.2-10 mTorr. The sputtering power is usually between 0.1 and 10 watts per square centimeter. The sputtering time is usually between 0.5 and 30 minutes depending on the thickness required.

Related products:

Pt, Cu, Al

For more tantalum sputtering targetsinformation, please contact us. We will provide professional answers.